IRF9335PBF Datasheet, PDF (5/8 Pages) International Rectifier – HEXFET Power MOSFET

160
ID = -5.4A
140
120
100
80
TJ = 125°C
60
40
TJ = 25°C
20
2 4 6 8 10 12 14 16 18 20
-VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
450
400
ID
TOP -1.5A
350
-2.3A
BOTTOM -4.3A
300
250
200
150
100
50
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
IRF9335PbF
400
300
200
Vgs = -4.5V
100
Vgs = -10V
0
0
5
10 15 20 25 30
-ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
1000
800
600
400
200
0
1E-5
1E-4
1E-3 1E-2
Time (sec)
1E-1
1E+0
Fig 15. Typical Power vs. Time
D.U.T * ₊
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
-
• Low Leakage Inductance
+
Current Transformer
‚
-
-^„ +

R_G
• di/dt controlled by R_G
• Driver same type as D.U.T.
V_DD
+
• I_SD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
* V_GS=10V
D.U.T. I_SD Waveform
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. V_DS Waveform
Diode Recovery
dv/dt
V_DD
Re-Applied
Voltage
Body Diode
IInndduuccttoorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
I_SD
* V_GS = 5V for Logic Level Devices
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET^® Power MOSFETs
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