IRF9335PBF Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET Power MOSFET

100
10
1
TOP
BOTTOM
VGS
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
0.1
-2.5V
≤60µs PULSE WIDTH Tj = 25°C
0.01
0.1
1
10
100
-V _DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VDS = -10V
≤60µs PULSE WIDTH
10
TJ = 150°C
1
TJ = 25°C
IRF9335PbF
100
10
TOP
BOTTOM
VGS
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
1
-2.5V
≤60µs PULSE WIDTH Tj = 150°C
0.1
0.1
1
10
100
-V _DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
ID = -5.4A
VGS = -10V
1.4
1.1
0.8
0.1
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10000
1000
VGS = 0V, f = 1 KHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
100
CCrossss
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
14
ID= -4.3A
12
VDS= -24V
10
VDS= -15V
VDS= -6V
8
6
4
2
10
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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0
0
2
4
6
8
10 12
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3