IRF8736PBF Datasheet, PDF (5/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF8736PbF
20
16
12
8
4
0
25
50
75
100
125
150
TA, Ambient Temperature (°C)
2.4
2.2
2.0
1.8
ID = 50µA
1.6
1.4
1.2
1.0
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ, Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
τJ
τJ
τ1
τ1
R1
R1
Ci= τi/Ri
Ci i/Ri
R2
R2
τ2 _τ2
R3 R4 _{Ri (°C/W)} τι (sec)
R3
R4
τa ^{1.396574 0.000246}
τ3 _τ3
τ4
τ4
7.206851 0.037927
27.1278 1.0882
14.26877 30.3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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