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| IRF8736PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF8736PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.022 âââ
âââ 3.9 4.8
âââ 5.5 6.8
V/°C Reference to 25°C, ID = 1mA
e m⦠VGS = 10V, ID = 18A
e VGS = 4.5V, ID = 14.4A
1.35 1.8 2.35 V VDS = VGS, ID = 50µA
âââ -6.1 âââ mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
gfs
Forward Transconductance
Qg
Total Gate Charge
52 âââ âââ
âââ 17 26
S VDS = 15V, ID = 14.4A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
âââ 4.4 âââ
VDS = 15V
âââ 1.9 âââ nC VGS = 4.5V
âââ 5.8 âââ
ID = 14.4A
âââ 4.9 âââ
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 7.7 âââ
Qoss
Output Charge
âââ 7.1 âââ nC VDS = 10V, VGS = 0V
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
âââ 1.3 2.2
âââ 12 âââ
e â¦
VDD = 15V, VGS = 4.5V
âââ 15 âââ
ID = 14.4A
âââ 13 âââ ns RG = 1.8â¦
âââ 7.5 âââ
See Fig. 14
Ciss
Input Capacitance
âââ 2315 âââ
VGS = 0V
Coss
Output Capacitance
âââ 449 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 219 âââ
Æ = 1.0MHz
Avalanche Characteristics
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
 Avalanche Current
Typ.
âââ
âââ
Max.
126
14.4
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
âââ âââ 3.1
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
âââ âââ 144
A showing the
integral reverse
âââ âââ 1.0
e p-n junction diode.
V TJ = 25°C, IS = 14.4A, VGS = 0V
âââ 16
âââ 19
24
29
e ns TJ = 25°C, IF = 14.4A, VDD = 10V
nC di/dt = 300A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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