IRF8327SPBF Datasheet, PDF (5/9 Pages) International Rectifier – DirectFETPower MOSFET 

1000
100 ^{TJ = 150°C}
TJ = 25°C
TJ = -40°C
10
1
VGS = 0V
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60
50
40
30
20
10
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
250
200
150
IRF8327SPbF
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100μsec
10
1msec
1
10msec
DC
0.1 TA = 25°C
TJ = 150°C
Single Pulse
0.01
0.01
0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
3.0
2.5
2.0
ID = 25μA
ID = 100μA
ID = 150μA
1.5 _{ID = 250μA}
ID = 1.0mA
ID = 1.0A
1.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 0.82A
1.0A
BOTTOM 11A
100
50
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
www.irf.com
5