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IRF8327SPBF Datasheet, PDF (2/9 Pages) International Rectifier – DirectFETPower MOSFET 
IRF8327SPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
30
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
VGS(th)
Gate Threshold Voltage
1.4
ΔVGS(th)/ΔTJ
Gate Threshold Voltage Coefficient
–––
IDSS
Drain-to-Source Leakage Current
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
25
Qg
Total Gate Charge
–––
Qgs1
Pre-Vth Gate-to-Source Charge
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
Qgd
Gate-to-Drain Charge
–––
Qgodr
Gate Charge Overdrive
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
Qoss
Output Charge
–––
RG
Gate Resistance
–––
td(on)
Turn-On Delay Time
–––
tr
Rise Time
–––
td(off)
Turn-Off Delay Time
–––
tf
Fall Time
–––
Ciss
Input Capacitance
–––
Coss
Output Capacitance
–––
Crss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
IS
Continuous Source Current
–––
(Body Diode)
ISM
Pulsed Source Current
Ãg (Body Diode)
–––
VSD
Diode Forward Voltage
–––
trr
Reverse Recovery Time
–––
Qrr
Reverse Recovery Charge
–––
Typ.
–––
22
5.1
8.5
1.9
-6.3
–––
–––
–––
–––
–––
9.2
2.7
1.2
3.0
2.3
4.2
7.9
2.1
7.8
8.9
9.3
5.3
1430
370
140
Typ.
–––
–––
0.80
17
19
Max. Units
Conditions
–––
–––
7.3
10.9
2.4
V VGS = 0V, ID = 250μA
mV/°C Reference to 25°C, ID = 1mA
i mΩ VGS = 10V, ID = 14A
i VGS = 4.5V, ID = 11A
V VDS = VGS, ID = 25μA
––– mV/°C
1.0
150
100
-100
–––
μA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 11A
14
–––
VDS = 15V
––– nC VGS = 4.5V
–––
ID = 11A
–––
See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
3.7
–––
Ãi Ω
VDD = 15V, VGS = 4.5V
––– ns ID = 11A
–––
RG = 1.8Ω
–––
See Fig. 17
–––
VGS = 0V
––– pF VDS = 15V
–––
ƒ = 1.0MHz
Max. Units
Conditions
52
MOSFET symbol
A showing the
110
integral reverse
1.0
i p-n junction diode.
V TJ = 25°C, IS = 11A, VGS = 0V
26
29
i ns TJ = 25°C, IF = 11A
nC di/dt = 230A/μs
Notes:
‡ Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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