IRF7905PBF_15 Datasheet, PDF (5/10 Pages) International Rectifier – Improved Body Diode Reverse Recovery

Q1 - Control FET
2.0
ID = 7.8A
VGS = 10V
1.5
Typical Characteristics
IRF7905PbF
Q2 - Synchronous FET
2.0
ID = 8.9A
VGS = 10V
1.5
1.0
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 13. Normalized On-Resistance vs. Temperature
100.0
10.0
TJ = 150°C
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 14. Normalized On-Resistance vs. Temperature
100
TJ = 150°C
10
1.0
TJ = 25°C
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode Forward Voltage
50
ID = 7.8A
40
30
TJ = 125°C
20
TJ = 25°C
10
2
4
6
8
10
VGS, Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance vs.Gate Voltage
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1
TJ = 25°C
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
Fig 16. Typical Source-Drain Diode Forward Voltage
50
ID = 8.9A
40
30
TJ = 125°C
20
TJ = 25°C
10
2
4
6
8
10
VGS, Gate-to-Source Voltage (V)
Fig 18. Typical On-Resistance vs.Gate Voltage
5