IRF7905PBF_15 Datasheet, PDF (4/10 Pages) International Rectifier – Improved Body Diode Reverse Recovery

IRF7905PbF
Typical Characteristics
10000
1000
Q1 - Control FET
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
10000
1000
Coss
100
100
Crss
Q2 - Synchronous FET
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
10
100
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
12
ID= 6.3A
10
8
VDS= 25V
VDS= 16V
VDS= 7.6V
12
ID= 7.1A
10
VDS= 25V
VDS= 16V
VDS= 7.6V
8
6
6
4
4
2
2
0
0
2
4
6
8
10
QG Total Gate Charge (nC)
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
0
0
4
8
12
16
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge vs. Gate-to-Source
Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
1msec
10
100µsec
1msec
10
100µsec
1
10msec
0.1 TA = 25°C
Tj = 150°C
Single Pulse
0.01
100msec
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
4
1
10msec
0.1
0.01
TA = 25°C
Tj = 150°C
Single Pulse
100msec
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 12. Maximum Safe Operating Area
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