IRF7832ZPBF Datasheet, PDF (5/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF7832ZPbF
25
20
15
10
5
0
25
50
75
100 125 150
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
2.5
2.0
ID = 250µA
1.5
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
τ_{J τJ}
τ_{1 τ1}
R _{1R 1}
Ci= τi/Ri
C i= τi/R i
R _{2R 2}
τ_{2 τ2}
0.01
0.1
R _{3R 3}
Ri (°C/W)
τ_{AτA 5.6971}
τ_{3 τ3}
28.314
16
τi (sec)
0.015296
1.214900
40.40000
P_DM
t1
t₂
Notes:
1. Duty factor D = t1 / t 2
2. Peak T_J = P _DM x Z _thJA + T_A
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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