IRF7832ZPBF Datasheet, PDF (3/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF7832ZPbF
1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
1
0.1
0.01
0.1
2.3V
≤60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
10
1
0.1
2.3V
≤60µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
1000
100
10
TJ = 150°C
TJ = 25°C
1
0.1
1
VDS = 15V
≤60µs PULSE WIDTH
2
3
4
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0
ID = 21A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3