IRF7831PBF Datasheet, PDF (5/10 Pages) International Rectifier – HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mΩ@VGS = 10V , Qg(typ.) = 40nC )

IRF7831PbF
24
20
16
12
8
4
0
25
50
75
100
125
150
TJ , Junction Temperature (°C)
2.4
2.2
2.0
ID = 250µA
1.8
1.6
1.4
1.2
1.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ_{J τJ}
τ_{1 τ1}
R _{1R 1}
Ci= τi/Ri
C
R _{2R 2}
τ_{2 τ2}
R _{3R 3}
τ_{3 τ3}
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R _{4R 4}
τ_4τ4
R _{5R 5}
Ri (°C/W) τi (sec)
0.514 0.000182
τ_{Cτ 2.445 0.030949}
τ_{5 τ5}
20.64
17.80
0.36354
6.99
8.604 109
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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