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| IRF7831PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mΩ@VGS = 10V , Qg(typ.) = 40nC ) | |||
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IRF7831PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
30
âââ
2.5
3.0
1.35
âââ
âââ
0.025
3.1
3.7
âââ
- 5.7
âââ
âââ
3.6
4.4
2.35
âââ
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
e m⦠VGS = 10V, ID = 20A
e VGS = 4.5V, ID = 16A
V VDS = VGS, ID = 250µA
mV/°C
âââ âââ 1.0 µA VDS = 24V, VGS = 0V
âââ âââ 150
VDS = 24V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 12V
âââ âââ -100
VGS = -12V
97 âââ âââ S VDS = 15V, ID = 16A
âââ 40 60
âââ 12 âââ
VDS = 15V
âââ 3.1 âââ nC VGS = 4.5V
âââ 11 âââ
ID = 16A
âââ 14 âââ
See Fig. 16
âââ 14 âââ
âââ 22 âââ nC VDS = 16V, VGS = 0V
âââ 1.4 2.5
âââ 18 âââ
â¦
e VDD = 15V, VGS = 4.5V
âââ 10 âââ
ID = 16A
âââ 17 âââ ns Clamped Inductive Load
âââ 5.3 âââ
âââ 6240 âââ
âââ 980 âââ
âââ 390 âââ
VGS = 0V
pF VDS = 15V
Æ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
d Single Pulse Avalanche Energy
IAR
 Avalanche Current
Typ.
âââ
âââ
Max.
100
16
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 2.5
MOSFET symbol
(Body Diode)
A showing the
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ âââ 170
integral reverse
âââ âââ 1.2
p-n junction diode.
e V TJ = 25°C, IS = 16A, VGS = 0V
âââ 42 62 ns TJ = 25°C, IF = 16A, VDD = 25V
âââ 31
47
e nC di/dt = 100A/µs
ton
Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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