IRF7738L2PBF Datasheet, PDF (5/10 Pages) International Rectifier – DirectFET

Power MOSFET

10000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
100
DC
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 13. Maximum Safe Operating Area
10
IRF7738L2PbF
600
ID
500
TOP 17A
29A
BOTTOM 109A
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Temperature
1
0.1
0.01
0.001
1E-006
D = 0.50
0.20
0.10
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci i/Ri
R_2R2
τ_{2 τ2}
R_3R3
R_4R4
Ri (°C/W)
0.00399
τi (sec)
18.81517
τ_{Cτ 0.81430}
0.03055
τ_{3 τ3}
τ_4τ4
0.15982
0.00014
0.62239 0.00402
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
Duty Cycle = Single Pulse
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
10
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 16. Typical Avalanche Current Vs.Pulsewidth
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1.0E-01
February 13, 2014