English
Language : 

IRF7738L2PBF Datasheet, PDF (1/10 Pages) International Rectifier – DirectFETPower MOSFET
Features
• Advanced Process Technology
• Optimized for Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead free, RoHS Compliant and Halogen free
IRF7738L2PbF
DirectFET® Power MOSFET ‚
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg
40V
1.2mΩ
1.6mΩ
184A
129nC
SSS
D
G
SSS
D
Applicable DirectFET® Outline and Substrate Outline 
SB
SC
M2
M4
L6
DirectFET™ ISOMETRIC
L4
L6
L8
Description
The IRF7738L2TR(1)PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-
state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The DirectFET package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-
1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET® packaging platform
coupled with the latest silicon technology allows the IRF7738L2TR(1)PbF to offer substantial system level savings and performance improvement specifically
in motor drive, high frequency DC-DC and other heavy load applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance
and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These
features combine to make this MOSFET a highly efficient, robust and reliable device for high current applications.
Part number
IR F7 73 8L 2T R P b F
IR F7 73 8L 2T R 1 P b F
Package T ype
D ire ctF E T 2 L a rg e C a n
D ire ctF E T 2 L a rg e C a n
Standard Pack
Form
Q u an tity
Tape and Reel
4000
Tape and Reel
1000
N ote
"T R" suffix
"T R 1 " suffix E O L no tic e # 2 6 4
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
IAR
EAR
Drain-to-Source Voltage
Gate-to-Source Voltage
f Continuous Drain Current, VGS @ 10V (Silicon Limited)
f Continuous Drain Current, VGS @ 10V (Silicon Limited)
e Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
g Pulsed Drain Current
f Power Dissipation
e Power Dissipation
h Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
Ãg Avalanche Current
g Repetitive Avalanche Energy
TP
Peak Soldering Temperature
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJCan
RθJ-PCB
e Junction-to-Ambient
j Junction-to-Ambient
k Junction-to-Ambient
fl Junction-to-Can
Parameter
f Junction-to-PCB Mounted
Linear Derating Factor
HEXFET® is a registered trademark of International Rectifier.
Max.
40
± 20
184
130
35
315
736
94
3.3
134
538
See Fig.18a, 18b, 16, 17
270
-55 to + 175
Typ.
–––
12.5
20
–––
–––
0.63
Max.
45
–––
–––
1.6
0.5
Units
V
A
W
mJ
A
mJ
°C
Units
°C/W
W/°C
1
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 13, 2014
 ▷