IRF7606PBF_15 Datasheet, PDF (5/7 Pages) International Rectifier – Generation V Technology

IRF7606PbF
1000
800
600
400
200
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C _gd
Ciss
Coss
Crss
0
A
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I _D = -2.7A
16
12
V_DS = -24V
V_DS = -15V
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
5
10
15
20
25
30
Q _G , Total Gate Charge (nC)
Fig 9. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P_DM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
Notes:
1. Duty factor D = t1 / t 2
2. Peak T _J = P _DM x Z _thJA + T_A
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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