IRF7606PBF_15 Datasheet, PDF (1/7 Pages) International Rectifier – Generation V Technology

PD - 95245
l Generation V Technology
l Ultra Low On-Resistance
S
l P-Channel MOSFET
l Very Small SOIC Package
S
l Low Profile (<1.1mm)
S
l Available in Tape & Reel
G
l Fast Switching
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
IRF7606PbF
HEXFET^® Power MOSFET
1
A
8
D
2
7
D
3
6
D
4
5
D
Top View
V_DSS = -30V
R_DS(on) = 0.09Ω
The new Micro8 package, with half the footprint area
of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.1mm)
of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Drain-Source Voltage
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current
Maximum Power Dissipation„
Maximum Power Dissipation „
Linear Derating Factor
-30
V
-3.6
-2.9
A
-29
1.8
W
1.1
W
14
mW/°C
V_GS
V_GSM
dv/dt
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt ‚
± 20
30
-5.0
V
V
V/ns
T_J , T_STG
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 150
°C
240 (1.6mm from case)
Thermal Resistance
Parameter
Max.
Units
R_θJA
Maximum Junction-to-Ambient „
70
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
www.irf.com
1
5/13/04