IRF7524D1PBF Datasheet, PDF (5/8 Pages) International Rectifier – Co-packaged HEXFET
Power

IRF7524D1PbF
Power Mosfet Characteristics
1000
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
0.01
t1
1
SINGLE PULSE
(THERMAL RESPONSE)
t₂
Notes:
1. Duty factor D = t1 / t 2
0.1
0.00001
0.0001
0.001
0.01
2. Peak T J = P DM x Z thJC + TC
0.1
1
10
100
t₁ , Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1.0
0.8
0.6
VGS = -2.5V
0.4
VGS = -5.0V
0.2
0.0
0.0
0.5
1.0
1.5
2.0
-I_D , Drain Current (A)
Fig 10. Typical On-Resistance Vs. Drain
Current
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0.300
0.250
0.200
ID = -1.7A
0.150
0.100
2
3
4
5
6
7
8
-V_GS , Gate-to-Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5