IRF7524D1PBF Datasheet, PDF (3/8 Pages) International Rectifier – Co-packaged HEXFET
Power

10
VGS
TOP -7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
1
Power Mosfet Characteristics
10
TOP
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
1
IRF7524D1PbF
0.1
0.01
0.1
-1.50V
20µs PULSE WIDTH
TJ= 25 °C
1
10
-V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
-1.50V
0.01
0.1
20µs PULSE WIDTH
TJ = 150 °C
1
10
-V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
10
T_J = 25°C
T_J = 150°C
1
0.1
0.01
1.5
V_DS = -10V
20µs PULSE WIDTH
2.0
2.5
3.0
3.5
4.0
4.5
5.0^A
-V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0
I_D = -1.2A
1.5
1.0
0.5
0.0
-60
V_GS = -4.5V
A
-40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3