IRF7422D2 Datasheet, PDF (5/8 Pages) International Rectifier – FETKY-TM MOSFET AND Schottky Diode

IRF7422D2
Power Mosfet Characteristics
100
0.50
0.20
10
0.10
0.05
0.02
1 _0.01
P_DM
t1
t₂
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T J = P DM x Z thJA + TA
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.4
0.3
0.2
V_GS = -2.5V
0.1
V_GS = -5.0V
0.0
A
0
2
4
6
8
I_D , Drain Current (A)
Fig 10. Typical On-Resistance Vs. Drain
Current
www.irf.com
0.14
0.12
0.10
I _D = -4.3A
0.08
0.06
0.04
2
A
3
4
5
6
7
V_GS , Gate-to-Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5