IRF7422D2 Datasheet, PDF (1/8 Pages) International Rectifier – FETKY-TM MOSFET AND Schottky Diode

PD- 91412L
IRF7422D2
FETKY ^TM MOSFET & Schottky Diode
Co-packaged HEXFET Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
A
1
A
2
AA
8
D
7
D
V_DSS = -20V
P-Channel HEXFET
Low V_F Schottky Rectifier
Generation 5 Technology
SO-8 Footprint
S
3
6 _{D RDS(on) = 0.09Ω}
G
4
5
D
Schottky Vf = 0.52V
Top View
Description
The FETKY^TM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative
board space saving solution for switching regulator
and power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results
in an extremely efficient device suitable for use in a
wide variety of portable electronics applications.
SO-8
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
dv/dt
T_J, T_STG
Parameter
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current ➀
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
R_θJA
Junction-to-Ambient ➃
Maximum
-4.3
-3.4
-33
2.0
1.3
16
± 12
-5.0
-55 to +150
Maximum
62.5
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
I_SD ≤ -2.2A, di/dt ≤ -50A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
1
11/27/01