IRF7326D2 Datasheet, PDF (5/8 Pages) International Rectifier – FETKY MOSFET / Schottky Diode

Power Mosfet Characteristics
IRF7326D2
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P_DM
t₁
t₂
0.1
0.0001
0.001
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T _J = P _DM x Z _thJA + T_A
0.01
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.50
0.14
0.40
0.12
0.30
VGS = -4.5V
0.10
0.20
VGS = -10V
0.08
0.10
ID = -3.6A
0.00
0
2
4
6
8
10 12 14
-I_D , Drain Current (A)
0.06
4
6
8
10
12
14
16
-V_GS , Gate-to-Source Voltage (V)
Fig 10. Typical On-Resistance Vs. Drain
Current
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Fig 11. Typical On-Resistance Vs. Gate
Voltage
5