IRF7326D2 Datasheet, PDF (2/8 Pages) International Rectifier – FETKY MOSFET / Schottky Diode

IRF7326D2
MOSFET Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
-30 — — V V_GS = 0V, I_D = -250µA
R_DS(on)
Static Drain-to-Source On-Resistance
— 0.073 0.10 _Ω V_GS = -10V, I_D = -1.8A ƒ
— 0.13 0.16
V_GS = -4.5V, I_D = -1.5A ƒ
V_GS(th)
Gate Threshold Voltage
-1.0 — — V V_DS = V_GS, I_D = -250µA
g_fs
Forward Transconductance
2.5 — — S V_DS = -24V, I_D = -1.8A
I_DSS
Drain-to-Source Leakage Current
— — -1.0 _{µ A} V_DS = -24V, V_GS = 0V
— — -25
V_DS = -24V, V_GS = 0V, T_J = 55°C
I_GSS
Gate-to-Source Forward Leakage
— — 100 _{n A} V_GS = -20V
Gate-to-Source Reverse Leakage
— — -100
V_GS = 20V
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
— — 25
I_D = -1.8A
— — 2.9 nC V_DS = -24V
— — 9.0
V_GS = -10V (see figure 6) Ž
t_d(on)
Turn-On Delay Time
— 11 —
V_DD = -15V
t_r
t_d(off)
t_f
Rise Time
Turn-Off Delay Time
Fall Time
— 17 —
— 25 —
— 18 —
ns ^{ID = -1.8A}
R_G = 6.0Ω
R_D = 8.2Ω Ž
C_iss
Input Capacitance
— 440 —
V_GS = 0V
C_oss
Output Capacitance
— 200 — pF V_DS = -25V
C_rss
Reverse Transfer Capacitance
— 93 —
ƒ = 1.0MHz (see figure 5)
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
I_S
Continuous Source Current (Body Diode) — — -2.5 A
ISM
Pulsed Source Current (Body Diode)
— — -29
V_SD
Body Diode Forward Voltage
— — -1.0 V
t_rr
Reverse Recovery Time (Body Diode) — 53 80 ns
Q_rr
Reverse Recovery Charge
Schottky Diode Maximum Ratings
— 66 99 nC
Conditions
T_J = 25°C, I_S = -1.8A, V_GS = 0V
T_J = 25°C, I_F = -1.8A
di/dt = 100A/µs Ž
If (av)
ISM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units
2.8
1.8 ^A
200
20 _A
Conditions
50% Duty Cycle. Rectangular Wave, Tc = 25°C
50% Duty Cycle. Rectangular Wave, Tc = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Parameter
Vfm
Max. Forward voltage drop
Irm
Ct
dv/dt
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.57
0.77
0.52 ^V
0.79
0.30 _mA
37
310 pF
4900 V/µs
Conditions
If = 3.0, Tj = 25°C
If = 6.0, Tj = 25°C
If = 3.0, Tj = 125°C
If = 6.0, Tj = 125°C .
Vr = 30V Tj = 25°C
Tj = 125°C
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated Vr
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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