IRF7316PBF_15 Datasheet, PDF (5/7 Pages) International Rectifier – GENERATION V TECHNOLOGY

IRF7316PbF
1400
1200
1000
800
600
V_GS = 0V
f = 1 MHz
Ciss = Cgs + Cgd + Cds
Crss = Cgd
Coss = Cds + Cgd
SHORTED
C_iss
C_oss
400
C_rss
200
0
A
1
10
100
- V_DS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I_D = -4.9A
16
V_DS =-15V
12
8
4
0
0
10
20
30
40
Q_G , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
0.20
10
0.10
0.05
0.02
1 _0.01
PDM
t₁
t₂
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T_J = P _DM x Z_thJA + T_A
0.1
1
10
100
t₁ , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient