IRF7316PBF_15 Datasheet, PDF (2/7 Pages) International Rectifier – GENERATION V TECHNOLOGY

IRF7316PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
-30 ––– ––– V V_GS = 0V, I_D = -250µA
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, I_D = -1mA
R_DS(on)
Static Drain-to-Source On-Resistance
––– 0.042 0.058
––– 0.076 0.098
Ω
V_GS = -10V, I_D = -4.9A „
V_GS = -4.5V, I_D = -3.6A „
V_GS(th)
Gate Threshold Voltage
-1.0 ––– ––– V V_DS = V_GS, I_D = -250µA
g_fs
Forward Transconductance
––– 7.7 ––– S V_DS = -15V, I_D = -4.9A
I_DSS
Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
µA
V_DS = -24V, V_GS = 0V
V_DS = -24V, V_GS = 0V, T_J = 55°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 _nA V_GS = -20V
––– ––– -100
V_GS = 20V
Q_g
Total Gate Charge
––– 23 34
I_D = -4.9A
Q_gs
Gate-to-Source Charge
––– 3.8 5.7 nC V_DS = -15V
Q_gd
Gate-to-Drain ("Miller") Charge
––– 5.9 8.9
V_GS = -10V, See Fig. 10 „
t_d(on)
Turn-On Delay Time
––– 13 19
V_DD = -15V
t_r
t_d(off)
Rise Time
Turn-Off Delay Time
––– 13 20
––– 34 51
ns ^{ID = -1.0A}
R_G = 6.0Ω
t_f
Fall Time
––– 32 48
R_D = 15Ω „
C_iss
Input Capacitance
––– 710 –––
V_GS = 0V
C_oss
Output Capacitance
––– 380 ––– pF V_DS = -25V
C_rss
Reverse Transfer Capacitance
––– 180 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
Min. Typ. Max.
––– ––– -2.5
––– ––– -30
––– -0.78 -1.0
––– 44 66
––– 42 63
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
T_J = 25°C, I_S = -1.7A, V_GS = 0V ƒ
T_J = 25°C, I_F = -1.7A
di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 35mH
R_G = 25Ω, I_AS = -2.8A.
… Surface mounted on FR-4 board, t ≤ 10sec.
ƒ I_SD ≤ -2.8A, di/dt ≤ 150A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.