IRF7309 Datasheet, PDF (5/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF7309
N-Channel
4.0
3.0
2.0
Fig 10a. Switching Time Test Circuit
1.0
0.0
A
25
50
75
100
125
150
T_A , Ambient Temperature (°C)
Fig 9. Max. Drain Current Vs. Ambient Temp.
Fig 10b. Switching Time Waveforms
Fig 11a. Gate Charge Test Circuit
Fig 11b. Basic Gate Charge Waveform
100
VGS
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
P-Channel
100
VGS
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
-4.5V
10
-4.5V
20µs PULSE WIDTH
1
T_J = 25°C
A
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 12. Typical Output Characteristics, T_J = 25^oC
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 13. Typical Output Characteristics,T_J = 150^oC
151