IRF7309 Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

PRELIMINARY
HEXFET^® Power MOSFET
PD - 9.1243B
IRF7309
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
N-CHANNEL MOSFET
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
P-CHANNEL MOSFET
N-Ch P-Ch
V_DSS 30V -30V
R_DS(on) 0.050Ω 0.10Ω
Description
Top View
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design for
which HEXFET Power MOSFETs are well known, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
I_D @ T_A = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
10 Sec. Pulse Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Linear Derating Factor (PCB Mount)**
V_GS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
T_J, T_STG
Junction and Storage Temperature Range
Thermal Resistance
R_θJA
Parameter
Junction-to-Amb. (PCB Mount, steady state)**
Max.
N-Channel
P-Channel
4.7
-3.5
4.0
-3.0
3.2
-2.4
16
-12
1.4
0.011
± 20
6.9
-6.0
-55 to + 150
Units
A
A
A
A
W
W/°C
V
V/ns
°C
Min.
––––
Typ.
––––
Max.
90
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
147