IRF6794MTRPBF Datasheet, PDF (5/9 Pages) International Rectifier – HEXFET Power MOSFET plus Schottky Diode

1000
100
10
TJ = 150°C
1
TJ = 25°C
TJ = -40°C
VGS = 0V
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
200
10000
1000
IRF6794MTRPbF
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
100µsec
10
1
DC
1msec
0.1 ^{TA = 25°C}
Tj = 150°C
Single Pulse
0.01
0.0
0.1
10msec
1.0
10.0
100.0
VDS , Drain-toSource Voltage (V)
Fig 11. Maximum Safe Operating Area
3.0
160
2.5
ID = 10mA
120
2.0
80
1.5
40
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
900
800
700
600
500
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 2.5A
3.5A
BOTTOM 25A
400
300
200
100
0
25
50
75
100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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