IRF6794MTRPBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET plus Schottky Diode

IRF6794MTRPbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
BV_DSS
ΔΒV_DSS/ΔT_J
R_DS(on)
Drain-to-Source Breakdown Voltage
25
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
V_GS(th)
ΔV_GS(th)/ΔT_J
I_DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
110
Q_g
Total Gate Charge
–––
Q_gs1
Pre-Vth Gate-to-Source Charge
–––
Q_gs2
Post-Vth Gate-to-Source Charge
–––
Q_gd
Gate-to-Drain Charge
–––
Q_godr
Gate Charge Overdrive
–––
Q_sw
Switch Charge (Q_gs2 + Q_gd)
–––
Q_oss
Output Charge
–––
R_G
Gate Resistance
–––
t_d(on)
Turn-On Delay Time
–––
t_r
Rise Time
–––
t_d(off)
Turn-Off Delay Time
–––
t_f
Fall Time
–––
C_iss
Input Capacitance
–––
C_oss
Output Capacitance
–––
C_rss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
I_S
Continuous Source Current
–––
(Body Diode)
I_SM
Pulsed Source Current
Ãg (Body Diode)
–––
V_SD
Diode Forward Voltage
–––
t_rr
Reverse Recovery Time
–––
Q_rr
Reverse Recovery Charge
–––
Typ.
–––
14
1.3
2.3
1.8
-4.7
–––
–––
–––
–––
–––
31
7.8
4.4
11
7.8
15
27
0.30
15
25
9.7
9.6
4420
1260
530
Typ.
–––
–––
–––
27
51
Max. Units
Conditions
–––
–––
1.7
3.0
2.35
–––
500
5.0
100
-100
–––
V ^VGS ^{= 0V, I}D ^{= 1.0mA}
mV/°C ^{Reference to 25°C, I}D ^{= 10mA}
i _mΩ V_GS = 10V, I_D = 32A
i V_GS = 4.5V, I_D = 26A
V VDS = VGS, ID = 100µA
mV/°C ^VDS ^{= V}GS^{, I}D ^{= 10mA}
µA VDS = 20V, VGS = 0V
mA ^VDS ^{= 20V, V}GS ^{= 0V, T}J ^{= 125°C}
nA VGS = 20V
V_GS = -20V
S VDS = 13V, ID = 26A
47
–––
V_DS = 13V
––– nC ^VGS ^{= 4.5V}
–––
I_D = 26A
–––
See Fig. 15
–––
––– nC ^VDS ^{= 16V, V}GS ^{= 0V}
–––
–––
Ãi Ω
V_DD = 13V, V_GS = 4.5V
––– ns ID = 26A
–––
R_G = 1.8Ω
–––
See Fig. 17
–––
V_GS = 0V
––– pF VDS = 13V
–––
ƒ = 1.0MHz
Max. Units
Conditions
32
MOSFET symbol
A showing the
250
integral reverse
p-n junction diode.
0.75
i V T_J = 25°C, I_S = 26A, V_GS = 0V
41
77
i ^{ns TJ = 25°C, IF = 26A}
nC di/dt = 370A/µs
Notes:
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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