IRF5801PBF-1_15 Datasheet, PDF (5/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF5801PbF-1
0.6
0.5
0.4
0.3
0.2
0.1
0.0
25
50
75
100
125
150
T_C , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
V_DS
V_GS
R_G
R_D
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+_-VDD
Fig 10a. Switching Time Test Circuit
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off) t_f
Fig 10b. Switching Time Waveforms
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P_DM
t₁
t₂
Notes:
1. Duty factor D =t₁ / t ₂
0.1
0.00001
0.0001
0.001
0.01
2. Peak T_J = P _DM x Z_thJC + T_C
0.1
1
10
100
t₁, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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July 15, 2014