IRF5801PBF-1_15 Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

V_DS
R_{DS(on) max}
(@VGS = 10V)
Q_{g (typical)}
I_D
(@TA = 25°C)
200
V
2.20 Ω
3.9 nC
0.6
A
Features
Industry-standard pinout TSOP-6 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
IRF5801PbF-1
HEXFET^® Power MOSFET
D1
D2
G3
6D
5D
4S
TSOP-6
Benefits
⇒ ^{Multi-Vendor Compatibility}
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF5801TRPbF-1
Package Type
TSOP-6
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRF5801TRPbF-1
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Symbol
R_θJA
Parameter
Junction-to-Ambient „
Notes  through † are on page 8
Max.
0.6
0.48
4.8
2.0
0.016
± 30
9.6
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
Max.
62.5
Units
°C/W
1
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July 15, 2014