HFB35HB20 Datasheet, PDF (5/5 Pages) International Rectifier – Ultrafast, Soft Recovery Diode

HFB35HB20
REVERSE RECOVERY CIRCUIT
V_R = 200V
L = 70µH
0.01 Ω
D .U .T.
dif/dt
ADJUST _G
D
IRFP250
S
I_F
0
3
trr
ta
t_b
2
I _RRM
4
Q _rr
0.5 I _RRM
di(rec)M /dt ⁵
1 _{dif /dt}
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
0.75 I_RRM
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. 10 - Reverse Recovery Waveform and Definitions
Case Outline and Dimensions — TO-254AA
3.78 [.149]
3.53 [.139]
A
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
0.12 [.005]
1.27 [.050]
1.02 [.040]
17.40 [.685]
16.89 [.665]
31.40 [1.235]
30.35 [1.195]
123
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
3.81 [.150]
3X
1.14 [.045]
0.89 [.035]
2X
NOT ES :
0.36 [.014] B A
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
3. CONT ROLLING DIMENS ION: INCH.
4. CONFORMS T O JEDEC OUTLINE T O-254AA.
13.84 [.545]
13.59 [.535]
B
3.81 [.150]
PIN AS S IGNMENTS
1 = DRAIN
2 = S OURCE
3 = GAT E
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Data and specifications subject to change without notice. 03/01
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