HFB35HB20 Datasheet, PDF (1/5 Pages) International Rectifier – Ultrafast, Soft Recovery Diode

HEXFRED^TM
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
PD - 94100
HFB35HB20
Ultrafast, Soft Recovery Diode
V_R = 200V
I_F(AV) = 35A
t_rr = 35ns
Description
HEXFRED^TM diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies
the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber
in most applications. These devices are ideally suited for power converters, motors drives and other applications
where switching losses are significant portion of the total losses.
Absolute Maximum Ratings
V_R
I_F(AV)
I_FSM
P_D @ T_C = 25°C
T_J, T_STG
Parameter
Cathode to Anode Voltage
Continuous Forward Current, Q T_C = 80°C
Single Pulse Forward Current, R T_C = 25°C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Note: Q D.C. = 50% rect. wave
R 1/2 sine wave, 60 Hz , P.W. = 8.33 ms
Max.
200
35
150
125
-55 to +150
Units
V
A
W
°C
CASE STYLE
(ISOLATED BASE)
TO-254AA
CATHODE
ANODE
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1
03/23/01