GA600HD25S Datasheet, PDF (5/10 Pages) International Rectifier – Standard Speed IGBT

160000
120000
80000
V_GE = 0V, f = 1MHz
C_ies = C_ge + C_{gc ,} C_ce SHORTED
C_res = C_gc
C_oes = C_ce + C_gc
C_ies
40000
C_oes
C_res
0
1
10
100
V_CE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
GA600HD25S
20 _{VCC = 2450000VV}
I _C = 600A
16
12
8
4
0
0
1000
2000
3000
4000
Q_G, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
150
V_CC = 150V
V_GE = 15V
T_J = 25 ^°C
I_C = 600A
140
130
120
1000
R_G = 15Ω; RG2 = 0Ω
VGE = 15V
VCC = 150V
100
I_C = 1000A
IC = 600A
I_C = 300A
110
0
10
20
30
40
50
R_G , Gate Resistance ( Ω )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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10
A
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5