GA600HD25S Datasheet, PDF (2/10 Pages) International Rectifier – Standard Speed IGBT

GA600HD25S
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)CES Collector-to-Emitter Breakdown Voltage 250
V_CE(on)
Collector-to-Emitter Voltage
—
—
V_GE(th)
Gate Threshold Voltage
3.0
∆V_GE(th)/∆T_J Temperature Coeff. of Threshold Voltage —
g_fe
Forward Transconductance ƒ
—
I_CES
Collector-to-Emitter Leaking Current
—
—
V_FM
Diode Forward Voltage - Maximum
—
—
I_GES
Gate-to-Emitter Leakage Current
—
∆T_DP
Pulse Diode Temp Rise
—
R-T₂₅
Thermistor, Positive Temp Coefficient 779
—
1.20
1.16
—
-11
720
—
—
1.5
1.5
—
—
820
—
1.30
1.25 V
6.0
— mV/°C
—S
2.0 mA
20
1.8 V
—
1.0 µA
80 °C
861 Ω
V_GE = 0V, I_C = 1mA
V_GE = 15V, I_C = 600A
V_GE = 15V, I_C = 600A, T_J = 125°C
I_C = 5.0mA, V_CE = 6.0V
V_CE = 6.0V, I_C = 5.0mA,T_C= 25/125°C
V_CE = 25V, I_C = 600A
V_GE = 0V, V_CE = 250V
V_GE = 0V, V_CE = 250V, T_J = 125°C
I_F = 300A, V_GE = 0V
I_F = 300A, V_GE = 0V, T_J = 125°C
V_GE = ±14V (18V zeners gate-emitter)
I_C = 300A, t = 150msec, Tc =70°C
I = 100mA,P = 2.5mW/°C (see note 1)
Dynamic Characteristics - T_J = 125°C (unless otherwise specified)
Q_g
Qge
Q_gc
t_d(on)
t_r
t_d(off)
t_f
E_on
E_{off (1)}
E_{ts (1)}
C_ies
C_oes
C_res
t_rr
I_rr
Q_rr
di_(rec)M_/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During t_b
Min. Typ. Max. Units
Conditions
— 3825 5738
V_CC = 200V, V_GE = 15V
— 555 832 nC I_C = 600A
— 1262 1893
T_J = 25°C
— 1060 —
R_G1 = 15Ω, R_G2 = 0Ω,
— 950 — ns I_C = 600A
— 846 —
— 934 —
V_{CC =} 150V,
V_GE = ±15V
Inductor load
— 17 — mJ See Fig. 18, 20
— 105 —
— 122 250
— 86063 —
V_GE = 0V
— 9754 —
— 1913 —
pF V_CC = 30V
ƒ = 1 MHz
— 314 —
— 80 —
— 12513 —
— 632 —
ns
A
µC
A/µs
I_C = 600A
R_G1 = 15Ω
R_G2 = 0Ω
V_{CC =} 150V
di/dt = 500A/µs
Notes:
1. The thermistor has an average rate of change of 7Ω /°C between 20°C and 125°C.
Consult Quality Thermistor Inc. data sheet QTI 0805-821J for details
2
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