AUIRLS3114Z Datasheet, PDF (5/13 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRLS3114Z
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
14.0
12.0
ID= 56A
10.0
8.0
VDS= 32V
VDS= 20V
VDS= 8V
6.0
4.0
2.0
0.0
0
10 20 30 40 50 60 70 80 90
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
TJ = 175°C
100
TJ = 25°C
10
1.0
0.0
VGS = 0V
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100μsec
10msec ^1msec
1 Tc = 25°C
Tj = 175°C
DC
Single Pulse
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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