AUIRLS3114Z Datasheet, PDF (1/13 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD - 96412
AUIRLS3114Z
HEXFET^® Power MOSFET
Features
l Advanced Process Technology
l Ultra Low On-Resistance
D ^VDSS
R_DS(on) typ.
40V
3.8mΩ
l Enhanced dV/dT and dI/dT capability
l 175°C Operating Temperature
l Fast Switching
max. 4.9mΩ
G
I_{D (Silicon Limited)}
c 122A
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
S _{ID (Wirebond Limited) 56A}
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per sili-
con area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
G
Gate
S
GD
D²Pak
AUIRLS3114Z
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise
specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wirebond Limited)
d Pulsed Drain Current
Maximum Power Dissipation
Max.
™ 122
86 ™
56
488
143
Units
A
W
Linear Derating Factor
0.95
W/°C
V_GS
E_{AS (Thermally Limited)}
E_{AS (Tested)}
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
e Single Pulse Avalanche Energy
Single Pulse Avalanche Energy
Ãd Avalanche Current
d Repetitive Avalanche Energy
f Peak Diode Recovery
± 20
168
518
See Fig. 12a, 12b, 15, 16
2.3
V
mJ
A
mJ
V/ns
T_J
T_STG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Thermal Resistance
Parameter
R_θJC
j Junction-to-Case
R_θJA
i Junction-to-Ambient (PCB Mount)
Typ.
–––
–––
Max.
1.05
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
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10/4/11