AUIRLR024N Datasheet, PDF (5/13 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance Fully Avalanche Rated

800
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
600
C_iss ^{Coss = Cds + C gd}
400
Coss
200
Crss
0
A
1
10
100
V_DS , Drain-to-Source Voltage (V)
AUIRLR/U024N
15
I _D = 11A
12
V_DS = 44V
V_DS = 28V
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
4
8
12
16
20
Q_G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 175°C
10
T_J = 25°C
1
VGS = 0V _A
0.4
0.8
1.2
1.6
2.0
V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10µs
10
100µs
T_C = 25°C
T_J = 175°C
Single Pulse
1
1ms
10ms
A
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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