AUIRLR024N Datasheet, PDF (2/13 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance Fully Avalanche Rated

AUIRLR/U024N
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– –––
V V_GS = 0V, I_D = 250µA
∆V_(BR)DSS/∆T_J
R_DS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
–––
–––
0.061
–––
–––
–––
–––
0.065
0.080
0.110
V/°C
Ω
Reference to 25°C, I_D = 1mA
f V_GS = 10V, I_D = 10A
f V_GS = 5.0V, I_D = 10A
f V_GS = 4.0V, I_D = 9.0A
V_GS(th)
Gate Threshold Voltage
1.0 ––– 2.0
V V_DS = V_GS, I_D = 250µA
gfs
Forward Transconductance
8.3 ––– –––
S V_DS = 25V, I_D = 11A
I_DSS
Drain-to-Source Leakage Current
––– ––– 25
µA V_DS = 55V, V_GS = 0V
––– ––– 250
V_DS = 44V, V_GS = 0V, T_J = 150°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA V_GS = 16V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -16V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Total Gate Charge
––– ––– 15
I_D = 11A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– –––
––– –––
3.7
8.5
fh nC VDS = 44V
V_GS = 5.0V,See Fig 6 and 13
t_d(on)
Turn-On Delay Time
––– 7.1 –––
V_DD = 28V
t_r
Rise Time
––– 74 –––
I_D = 11A
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
–––
–––
20
29
–––
–––
Ãfh ns RG = 12 Ω, VGS = 5.0V
R_D = 2.4Ω, See Fig.10
L_D
Internal Drain Inductance
Between lead,
D
––– 4.5 –––
nH 6mm (0.25in.)
L_S
Internal Source Inductance
––– 7.5 –––
from package
and center of die contact
G
S
C_iss
Input Capacitance
––– 480 –––
V_GS = 0V
C_oss
C_rss
Output Capacitance
Reverse Transfer Capacitance
––– 130 –––
––– 61 –––
h pF VDS = 25V
ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 17
A showing the
integral reverse
G
––– ––– 72
S
––– ––– 1.3
f ^{p-n junction diode.}
V T_J = 25°C, I_S = 11A, V_GS = 0V
–––
–––
60
90
130 200
f ^{ns TJ = 25°C, IF = 11A}
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
‚ V_DD = 25V, starting T_J = 25°C, L = 790µH, R_G = 25Ω, I_AS = 11A. (See Figure 12)
ƒ I_SD ≤ 11A, di/dt ≤ 290A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%
… This is applied for I-PAK, L_S of D-PAK is measured between lead and center of die contact .
† Uses IRLZ24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
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