AUIRF540Z Datasheet, PDF (5/14 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRF540Z/S
3000
2500
2000
1500
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
500
0
1
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID= 22A
16
12
VDS= 80V
VDS= 50V
VDS= 20V
8
4
0
0
FOR TEST CIRCUIT
SEE FIGURE 13
10 20 30 40 50 60
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 175°C
10.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1.0
0.1
0.2
TJ = 25°C
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
1msec
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5