AUIRF540Z Datasheet, PDF (1/14 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD - 96326
AUIRF540Z
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
AUIRF540ZS
HEXFET^® Power MOSFET
D
V_(BR)DSS
100V
R_DS(on) typ. 21m_Ω
G
max. 26.5mΩ
S
I_D
36A
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
TO-220AB
AUIRF540Z
G
D²Pak
AUIRF540ZS
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 100°C Continuous Drain Current, VGS @ 10V}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
36
25
A
140
92
W
0.61
W/°C
V_GS
E_AS
E_AS (Tested )
I_AR
E_AR
T_J
T_STG
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally limited)
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
™ Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
± 20
V
83
mJ
120
See Fig.12a, 12b, 15, 16
A
mJ
-55 to + 175
°C
300(1.6mm from case)
y y 10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
Max. Units
R_θJC
R_θCS
R_θJA
R_θJA
i ^{Junction-to-Case}
Case-to-Sink, Flat Greased Surface
i Junction-to-Ambient
j Junction-to-Ambient (PCB Mount)
HEXFET^® is a registered trademark of International Rectifier.
–––
0.50
–––
–––
1.64
–––
°C/W
62
40
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10