AUIRF3805S-7P Datasheet, PDF (5/14 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRF3805S/L-7P
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = C _gd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
12.0
ID= 140A _{VDS= 64V}
10.0
VDS= 40V
8.0
6.0
4.0
2.0
0.0
0
50
100
150
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
10000
1000
100
10
TJ = 175°C
TJ = 25°C
1
VGS = 0V
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1msec
10msec
10
DC
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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Fig 8. Maximum Safe Operating Area
5