AUIRF3805S-7P Datasheet, PDF (1/14 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
PD - 96318
AUIRF3805S-7P
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
AUIRF3805L-7P
HEXFET^® Power MOSFET
D
V_(BR)DSS
55V
G
S
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
R_DS(on) typ. 2.0m_Ω
i max. 2.6mΩ
I_D
240A
Description
Specifically designed for Automotive applications, this
D
D
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance
per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating.
These features combine to make this design an
extremely efficient and reliable device for use in
Automotive applications and a wide variety of other
S
G ^{S SS S}
D²Pak 7 Pin
AUIRF3805S-7P
S
GSSS ^S
TO-263CA 7 Pin
AUIRF3805L-7P
applications.
G
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. These are stress ratings only; and functional operation of the device at these or any other condition
beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise
specified.
Parameter
Max.
Units
I_D @ T_C = 25°C _{Continuous Drain Current, VGS @ 10V}
240
I_D @ T_C = 100°C _{Continuous Drain Current, VGS @ 10V}
c ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
170
160
1000
A
P_D @T_C = 25°C _{Maximum Power Dissipation}
300
W
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
dv/dt
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
j Single Pulse Avalanche Energy (Thermally Limited)
d Single Pulse Avalanche Energy Tested Value
c Avalanche Current
c Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
2.0
± 20
440
680
See Fig.12a,12b,15,16
2.3
-55 to + 175
W/°C
V
mJ
A
mJ
V/ns
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting torque, 6-32 or M3 screw
Thermal Resistance
10 lbf•in (1.1N•m)
R_θJC
R_θCS
R_θJA
R_θJA
Parameter
h Junction-to-Case
Case-to-Sink, Flat, Greased Surface
g ^{Junction-to-Ambient}
Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10