IRLHS2242PBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET Power MOSFET

IRLHS2242TR/TR2PbF
100
10
TJ = 150°C
TJ = 25°C
1
0.1
0.2
VGS = 0V
0.6
1.0
-VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
16
14
Limited By Wirebond
12
10
8
6
4
2
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
100
1000
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
100μsec
10
1msec
1
Limited by
Wirebond
10msec
DC
0.1 _{Tc = 25°C}
Tj = 150°C
Single Pulse
0.01
0.10
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
1.5
1.2
0.9
0.6
ID = -10uA
ID = -250uA
0.3
ID = -1.0mA
ID = -10mA
0.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
10
D = 0.50
0.20
1
0.10
0.05
0.02
0.01
0.1
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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