IRLHS2242PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

V_DS
V_{GS max}
R_{DS(on) max}
(@V_GS = 4.5V)
R_{DS(on) max}
(@V_GS = 2.5V)
Q_{g typ}
I_D
(@T_c(Bottom) = 25°C)
-20
V
±12
V
31
mΩ
53
mΩ
9.6
nC
i -8.5
A
Applications
l Charge and Discharge Switch for Battery Application
l System/load switch
PD - 96360
IRLHS2242PbF
HEXFET^® Power MOSFET
T OP VIEW
D1
D2
G3
6D
D 5D
S
4S
D
D
D
G
D
D
S
S
2mm x 2mm PQFN
Features and Benefits
Features
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 1.0mm)
Industry-Standard Pinout
Benefits
Enable better thermal dissipation
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLHS2242TRPBF
IRLHS2242TR2PBF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
T_J
T_STG
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
c ^{Continuous Drain Current, VGS @ 4.5V (Wirebond Limited)}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
-20
±12
-7.2
-5.8
-15hi
-9.8hi
i -8.5
-34
2.1
9.6
0.02
-55 to + 150
Notes  through ‡ are on page 9
www.irf.com
Note
Units
V
A
W
W/°C
°C
1
03/18/11