IRH9250 Datasheet, PDF (4/4 Pages) International Rectifier – TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A)

Previous Datasheet
Index
Next Data Sheet
IRH9250 Device
 Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
‚ @ VDD = -25V, Starting TJ = 25°C,
E_AS = [0.5 _* L _* (I²_L) _* [BVDSS/(BVDSS-VDD)]
Peak IL = -14A, VGS = -12V, 25 ≤ R_G ≤ 200Ω
ƒ ISD ≤ -14A, di/dt ≤ -140 A/µs,
VDD ≤ BVDSS, TJ ≤ 150°C
Suggested RG = 2.35ý
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
… K/W = °C/W
W/K = W/°C
Radiation Characteristics
† Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.
‡ Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019.
ˆ This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
‰ Process characterized by independent laboratory.
Š All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.
Case Outline and Dimensions
Conforms to JEDEC Outline TO-204AA (Modified TO-3)
Dimensions in Millimeters and (Inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: [phone]
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: [phone]
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: [phone]
http://www.irf.com/ Data and specifications subject to change without notice.
4/96
To Order