IRH9250 Datasheet, PDF (1/4 Pages) International Rectifier – TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A)

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Provisional Data Sheet No. PD-9.1392
AVALANCHE ENERGY AND dv/dt RATED
HEXFET^® TRANSISTOR
IRH9250
P-CHANNEL
RAD HARD
-200 Volt, 0.315Ω, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10⁵ Rads (Si). Under identical pre- and post-
radiation test conditions, International Rectifier’s P-Channel
RAD HARD HEXFETs retainidentical electrical specifications
up to 1 x 10⁵ Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x 10¹²
Rads (Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of
International Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the P-
Channel RAD HARD process utilizes International Rectifier’s
patented HEXFET technology, the user can expect the
highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inver ters, choppers, audio
amplifiers and high-energy pulse circuits in space and
weapons environments.
Product Summary
Part Number
BV_DSS
IRH9250
-200V
R_DS(on)
0.315Ω
I_D
-14A
Features:
n Radiation Hardened up to 1 x 10⁵ Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
Absolute Maximum Ratings
Pre-Radiation
Parameter
IRH9250
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current 
-14
-9
A
-56
PD @ TC = 25°C
Max. Power Dissipation
150
W
Linear Derating Factor
1.2
W/K …
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy‚
500
mJ
IAR
Avalanche Current 
-14
A
EAR
Repetitive Avalanche Energy 
15
mJ
dv/dt
Peak Diode Recovery dv/dt ƒ
-5.5
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
o_C
Lead Temperature
300 (0.063 in. (1 .6mm) from case for 10s)
Weight
11.5 (typical)
g
Notes: See page 4
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