IRGB4062DPBF_15 Datasheet, PDF (4/13 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRGB4062DPbF/IRGP4062DPbF/IRGP4062D-EPbF
90
80 ^{VGE = 18V}
VGE = 15V
70 VGE = 12V
VGE = 10V
60 VGE = 8.0V
50
40
30
20
10
0
012345678
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
T_J = 175°C; tp = 80μs
20
18
16
14
12
ICE = 12A
10
ICE = 24A
8
ICE = 48A
6
4
2
0
5
10
15
20
VGE (V)
Fig. 9 - Typical V_CE vs. V_GE
T_J = -40°C
20
18
16
14
12
ICE = 12A
10
ICE = 24A
8
ICE = 48A
6
4
2
0
5
10
15
20
VGE (V)
Fig. 11 - Typical V_CE vs. V_GE
T_J = 175°C
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120
100
80
-40°c
25°C
175°C
60
40
20
0
0.0
1.0
2.0
3.0
VF (V)
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
20
18
16
14
12
ICE = 12A
10
ICE = 24A
8
ICE = 48A
6
4
2
0
5
10
15
20
VGE (V)
Fig. 10 - Typical V_CE vs. V_GE
T_J = 25°C
120
100
TJ = 25°C
80
TJ = 175°C
60
40
20
0
0
5
10
15
VGE (V)
Fig. 12 - Typ. Transfer Characteristics
V_CE = 50V; tp = 10μs
July 17, 2013