IRGB4062DPBF_15 Datasheet, PDF (1/13 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRGB4062DPbF
IRGP4062DPbF
IRGP4062D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low V_{CE (ON)} Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA
G
• Square RBSOA
• 100% of the parts tested for I_LM 
• Positive V_{CE (ON)} Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
E
n-channel
• Tight parameter distribution
• Lead Free Package
C
V_CES = 600V
I_C = 24A, T_C = 100°C
t_SC 5μs, T_J(max) = 175°C
V_CE(on) typ. = 1.65V
C
C
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V_{CE (ON)} and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
E
C
G
TO-220AB
IRGB4062DPbF
G
Gate
E
C
G
E
C
G
TO-247AC
TO-247AD
IRGP4062DPbF IRGP4062D-EPbF
C
Collector
E
Emitter
Absolute Maximum Ratings
Pa ra m e te r
V _CES
I_C @ T_C = 25°C
I_C @ T_C = 100°C
I_CM
I_{L M}
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V_GE = 15V
c Clamped Inductive Load Current, V_GE = 20V
I_F @ T_C = 25°C
I_F @ T_C = 100°C
I_FM
V _GE
Diode Continous Forward Current
Diode Continous Forward Current
e Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
P_D @ T_C = 25°C
P_D @ T_C = 100°C
T_J
T_{ST G}
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
600
48
24
72
96
48
24
96
±20
±30
250
125
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Thermal Resistance
Pa ra m e te r
R _JC (IGBT)
R _JC (Diode)
R _JC (IGBT)
R _JC (Diode)
R _CS
R _JA
Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB
Thermal Resistance Junction-to-Case-(each Diode) TO-220AB
Thermal Resistance Junction-to-Case-(each IGBT) TO-247
Thermal Resistance Junction-to-Case-(each Diode) TO-247
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
0.50
80
Max.
0.60
1.53
0.65
1.62
–––
–––
Units
°C/W
1
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July 17, 2013