IRG4PC40KPBF_15 Datasheet, PDF (4/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

IRG4PC40KPbF
50
40
30
20
10
0
25
50
75
100
125
150
T_C , Case Temperature ( ° C)
5.0 _{VGE = 15V}
80 us PULSE WIDTH
4.0
I_C = 50 A
3.0
I_C = 25 A
2.0
I_C =12.5 A
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t₂
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t₁ , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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