IRG4PC40KPBF_15 Datasheet, PDF (3/9 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR

IRG4PC40KPbF
60
40
Square wave:
60% of rated
voltage
20
Ideal diodes
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 35W
0
0.1
1
10
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I_RMS of fundamental)
Triangular wave:
Clamp voltage:
80% of rated
A
100
100
100
T_J = 150 ^oC
10
T_J = 25 ^oC
V_GE = 15V
20µs PULSE WIDTH
1
0.1
1
10
V_CE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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TJ = 150°C
TJ = 25°C
10
V CC = 50V
1
5µs PULSE WIDTH _A
5
7
9
11
V_GE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3